| PART |
Description |
Maker |
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| FDPF10N60NZ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Fairchild Semiconductor
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| DCX123JU-7-F DCX143EU DCX143EU-7-F DCX114YU-7-F DC |
Prebiased Transistors
Discrete - Bipolar Transistors - Pre-Bias Transistors
|
Diodes
|
| SI3909DV |
P-Channel Vertical DMOS
|
TY Semiconductor Co., Ltd
|
| ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
